Photovoltaic characteristics of thin films of Cu2SnS3

dc.contributor.authorKuku, T. A.
dc.contributor.authorFakolujo, O. A.
dc.date.accessioned2018-10-09T14:58:57Z
dc.date.available2018-10-09T14:58:57Z
dc.date.issued1987
dc.description.abstractWe report for the first time the optical absorbtion and photovoltaic characteristics of thin films of Cu2SnS3.Films obtained by the direct evaporation of the synthesized compound were observed to be deficient in copper, while those grown in an atmosphere of copper vapour were observed to be more stoichiometric. Both sets of films are characterised by indirect and direct absorption edge propoerties. The indirect absorption edges are at 1.065 and 1.510 eV, while the direct band edges are at 1.658 and 1.770 eV for the copper deficient and stoichiometric films respectively. The stoichiometric film is characteried by p-type semiconducting properties while a Schottky type solar cell developed from it is observed to have potential photovoltaic characteristicsen_US
dc.identifier.issn0927-0248
dc.identifier.otherSolar Energy Material 16, pp. 199-204
dc.identifier.otherui_art_kuku_photovoltaic_1987
dc.identifier.urihttp://ir.library.ui.edu.ng/handle/123456789/1682
dc.language.isoen_USen_US
dc.publisherElsevieren_US
dc.titlePhotovoltaic characteristics of thin films of Cu2SnS3en_US
dc.typeArticleen_US

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